CMOS integrated circuits; MOSFET; bipolar transistors; buffer circuits; driver circuits; power semiconductor devices; silicon compounds; wide band gap semiconductors; BJT push-pull; BJT-CMOS hybrid circuits; CMOS push-pull; PSpice simulation; SiC; SiC MOSFET module; SiC technology; buffer circuits; current 300 A; gate drive circuit; high temperature potential; power module; temperature 175 degC; temperature 300 degC; Complexity theory; Drives; Logic gates; MOSFET; Silicon carbide; Threshold voltage; Transient analysis; SiC MOSFET module; high current gate driver; high temperature;
机译:基于高密度电流变压器的栅极驱动电源,具有10-kV SiC MOSFET模块的增强隔离
机译:由超高温度栅极氧化制造的良好平衡的N型和P沟道MOSFET构成的4H-SIC CMOS电路的演示
机译:1.2 kV,400 A SiC MOSFET模块的短路和过载栅极驱动器双重保护方案的设计,分析和讨论
机译:具有高温电位的高电流栅极驱动电路,用于SiC MOSFET模块
机译:使用SiC MOSFET的高温逆变器的外围电路研究。
机译:纳米MOSFET作为潜在的室温量子电流源
机译:用于SIC MOSFET模块的成本有效的电流源门驱动器及其与电压源门驱动器的比较