Sandwiched-gate inverter: Novel device structure for future logic gates

机译：夹层栅极逆变器：面向未来逻辑门的新型器件结构

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In this paper, we propose a novel sandwiched-gate inverter by using of an NMOS GAA together with a donut-type PMOS. The DC operation and the transient performance of the proposed inverter were investigated with 3D TCAD simulations. The proposed inverter exhibits a correct inverter operation with a high noise margin and speed.

机译：在本文中，我们提出了一种将NMOS GAA与甜甜圈型PMOS一起使用的新型夹心式栅极逆变器。通过3D TCAD仿真研究了所建议逆变器的直流运行和瞬态性能。所提出的逆变器显示出正确的逆变器操作，并具有较高的噪声容限和速度。

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《International Conference on Simulation of Semiconductor Processes and Devices》|2015年|442-445|共4页
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Ryu Myunghwan; Bien Franklin; Kim Youngmin;
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formatting; insert; style; styling;

机译：格式;插入;样式;样式;

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1. 新型场发射器件中栅极的化学刻蚀制备 [J] . 陈静, 雷威东南大学学报（英文版） . 2007,第002期
2. Si-nanowire Cmos Inverter Logic Fabricated Using Gate-all-around (gaa) Devices And Top-down Approach [J] . K, D, Buddharaju, Solid-State Electronics . 2008,第9期

机译：使用全能门（gaa）器件和自顶向下方法制造的Si-纳米线Cmos逆变器逻辑
3. A complete set of logic gates with an identical single-stage structure based on periodic nature of single-electron devices [J] . Sharifi Mohammad Javad, Ahmadian Mehdi Journal of Computational Electronics . 2021,第1期

机译：一种完整的一组逻辑门，基于单电子器件的周期性性质，具有相同的单级结构
4. The risk of pattern collapse for structures in future logic devices [J] . Sankarapandian M., Peethala B., Canaperi D., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2013,第Null期

机译：未来逻辑设备中结构崩溃的风险
5. Sandwiched-gate inverter: Novel device structure for future logic gates [C] . Ryu Myunghwan, Bien Franklin, Kim Youngmin International Conference on Simulation of Semiconductor Processes and Devices . 2015

机译：夹层门逆变器：未来逻辑门的新型设备结构
6. Constructing logic gates from self-assembled molecular devices. [D] . Van Zandt, William L. 2000

机译：从自组装分子器件构建逻辑门。
7. Reversible logic gate using adiabatic superconducting devices [O] . N. Takeuchi, Y. Yamanashi, N. Yoshikawa -1

机译：使用绝热超导器件的可逆逻辑门
8. High performance gate stack fabrication process of Ge MOS structure for future electronic devices [O] . HARUKA FUJIWARA, HIROSHI YAMADA, MITARO NAMIKI, 2018

机译：GE MOS结构的高性能门堆制造工艺未来电子设备
9. Review of Selected Smart Pixels: Self Electro-Optic Effect Devices, SurfaceEmitting Laser Logic Devices, Double Heterostructure Opto-Electronic Switch, Diode Laser Logic, Quenched-Laser Optical Gates [R] . Parker, M. A., Michalak, R. J., Kimmet, J. S., 1995

机译：所选智能像素的回顾：自电光效应器件，surfaceEmitting激光逻辑器件，双异质结构光电开关，二极管激光逻辑，淬火激光光学门

Sandwiched-gate inverter: Novel device structure for future logic gates

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