Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices

摘要

Zinc oxide (ZnO) based materials have attracted much attentions in the past decades for potential utilizations in transparent conducting oxides (TCOs), thin film transistors (TFTs) and light emitting diodes (LEDs) due to its superior properties such as large bandgap (3.37eV), large exciton binding energy (60 meV), high transparency and capability of synthesis under low to intermedium temperature. ZnO thin films are capable to grow on various substrates such as glasses, polymer, and sapphire under low deposition temperature, which makes it attractive in flexible electronics. Schottky contacts for ZnO thin film is an essential study for further applications of this material in photodetector and TFTs. Transparent ZnO based TFTs has become one of the most advance topics for device application currently as one of the most promising technologies leading in the next generation of display. The display market forecast has predicted that transparent display is expected to overtake Flat Panel Display in the next decade1.