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GaInAs/InP MQW light-emitting diode fabricated on wafer bonded InP/Quartz substrate

机译：GaInAs / InP MQW发光二极管制造在晶圆键合InP /石英衬底上

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GaInAs/InP multi quantum wells light-emitting diode, emitting at 1.3-μm, was fabricated by metal organic vapor phase epitaxi on wafer bonded InP/Quartz substrate. The device has been operated under continuous wave operation at room temperature.

机译：GaInas / InP多量子阱发光二极管，发射在1.3μm处，通过晶片键合的InP /石英底物上的金属有机气相外延制造。该装置在室温下连续波操作下操作。

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《Conference on Lasers and Electro-Optics 》|2015年|1-2|共2页
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Matsumoto Keiichi; Takasu Makoto; Kanaya Yoshinori; Kishikawa Junya; Shimomura Kazuhiko;
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1. Growth of GalnAs/InP MQW using MOVPE on directly-bonded InP/Si substrate [J] . K. Matsumoto, T. Makino, K. Kimura, Journal of Crystal Growth . 2013 ,第maya1期

机译：使用MOVPE在直接键合的InP / Si衬底上生长GalnAs / InP MQW
2. Wavelength demultiplexer using GaInAs-InP MQW-based variable refractive-index arrayed waveguides fabricated by selective MOVPE [J] . Kawakita Y., Shimotaya S., Kawai A., IEEE journal of selected topics in quantum electronics . 2005 ,第1期

机译：使用通过选择性MOVPE制成的基于GaInAs-InP MQW的可变折射率阵列波导的波长解复用器
3. Temperature compensation of the threshold current, differential efficiency, and refractive index of a GaInAs/InP MQW diode laser mounted on a bimetallic heatsink [J] . Cohen D.A., Coldren L.A. Electronics Letters . 1996 ,第24期

机译：安装在双金属散热器上的GaInAs / InP MQW二极管激光器的阈值电流，差分效率和折射率的温度补偿
4. GaInAs/InP MQW light-emitting diode fabricated on wafer bonded InP/Quartz substrate [C] . Matsumoto Keiichi, Takasu Makoto, Kanaya Yoshinori, Conference on Lasers and Electro-Optics . 2015

机译：GAINAS / INP MQW在晶片粘合的INP /石英基板上制造的发光二极管
5. Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates. [D] . Nichols, Jonathan A. 2004

机译：在柔性基板上制造的非晶硅薄膜晶体管有源矩阵有机发光二极管显示器。
6. Raman Spectroscopic Characterizations of Self-Catalyzed InP/InAs/InP One-Dimensional Nanostructures on InP(111)B Substrate using a Simple Substrate-Tilting Method [O] . Jeung Hun Park, Choong-Heui Chung 2019

机译：使用简单的基板倾斜方法在InP（111）B基板上自催化InP / InAs / InP一维纳米结构的拉曼光谱表征
7. InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation [O] . Fontcuberta i Morral A., Zahler J. M., Atwater Harry A., 2003

机译：通过晶片键合和氢致剥落在InP / Si模板上形成InGaAs / InP双异质结构
8. Planar Guarded Avalanche Diodes in InP Fabricated by Ion Implantation [R] . Donnelly, J. P., Armiento, C. A., Diadiuk, V., 1979

机译：离子注入制备Inp中的平面防护雪崩二极管

GaInAs/InP MQW light-emitting diode fabricated on wafer bonded InP/Quartz substrate

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