An improved equivalent circuit model based on the CMOS on-chip multiple coupled inductors from DC to millimeter-wave region

摘要

In this paper, an improved equivalent circuit model of multiple coupled inductors is proposed, as well as the parameter extraction method. First, the characteristics of the on-chip inductors are analyzed. Then according to electromagnetic properties of multiple coupled inductors, the improved equivalent model, which considers more parasitic effects among inductors, as well as the parameter extraction method are presented. The measurement structures are fabricated by the 0.18μm and 90nm CMOS technologies. It will be shown that the simulated results of the model are in good agreement with the measured results from DC up to millimeter-wave range and the validation of the proposed model is verified.