Designing silicon carbide NMOS integrated circuits for wide temperature operation

摘要

Designing integrated circuits using silicon carbide (SiC) MOSFETs for operation in a wide temperature range brings unique challenges that require a good understanding of device characteristics, careful analysis of device-circuit interactions and a fresh look at what the technology can and cannot do. We describe the available devices in General Electric's SiC MOSFET-based technology, and use common-source amplifiers as examples in the context of designing a circuit for a wide temperature range from 25 C to 500 C.