0.7 V supply self-biased nanoWatt MOS-only threshold voltage monitor

摘要

This work presents a self-biased MOSFET threshold voltage V monitor. The threshold condition is defined based on a current-voltage relationship derived from a continuous physical model. The model is valid for any operating condition, from weak to strong inversion, and under triode or saturation regimes. The circuit consists in balancing two self-cascode cells operating at different inversion levels, where one of the transistors that compose these cells is biased at the threshold condition. The circuit is MOSFET-only (can be implemented in any standard digital process), and it operates with a power supply of less than 1 V, consuming tenths of nW. We propose a process independent design methodology, evaluating different trade-offs of accuracy, area and power consumption. Schematic simulation results, including Monte Carlo variability analysis, support the V monitoring behavior of the circuit with good accuracy on a 180 nm process.