Impact of thermal budget on the low-frequency noise of DRAM peripheral nMOSFETs

摘要

The oxide trap density profile in DRAM peripheral nMOSFETs with Mg cap and different thermal budgets for in-diffusion of the metal ions has been investigated by low-frequency noise. It is shown that close to the SiO/HfO interface a peak in the trap density is found, which disappears under a high thermal budget. No impact of Mg on the bulk oxide trap density in the HfO is observed.