Ku-band GaAs MMIC high power amplifier with high efficiency and broadband

摘要

In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercept point (OIP3). This three-stage amplifier with chip size of 9.4mm2(4mm × 2.35mm) is designed to fully match 50-Ω input and output impedance.