Numerical modeling of silicon processing technology in CF4/H2 plasma

摘要

In the frame of hydrodynamical approach a technology of plasma-chemical etching silicon in CF/H plasma was simulated. The model of plasma-chemical kinetics contained 28 gas-phase reactions including the components F, F, CF, CF, CF, CF, H, H, HF, CHF, CHF. In the etching process a most part of fluorine goes on formation of component HF, that essentially reduces the etching rate of silicon. On the wafer surface it is formed the adsorption layer CF, which at 40 % H completely covers a silicon surface and stops the etching process.