5.6 A 400×400-Pixel 6μm-Pitch Vertical Avalanche Photodiodes CMOS Image Sensor Based on 150ps-Fast Capacitive Relaxation Quenching in Geiger Mode for Synthesis of Arbitrary Gain Images

摘要

The intensive development of Single-photon avalanche photodiode (SPAD) based CMOS image sensors (CIS) continues, with rapid progress [1-6]. Yet, due to unestablished quenching operation [5,6], realization of SPADs onto a CIS alongside conventional pixel circuitry has been a fundamental challenge.