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Increasing reticle inspection efficiency and reducing wafer print-checks at 14nm using automated defect classification and simulation

机译:使用自动缺陷分类和模拟,提高标线检查效率并减少14nm处的晶圆打印检查

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IC fabs inspect critical masks on a regular basis to ensure high wafer yields. These requalification inspections are costly for many reasons including the capital equipment, system maintenance, and labor costs. In addition, masks typically remain in the "requal" phase for extended, non-productive periods of time. The overall "requal" cycle time in which reticles remain non-productive is challenging to control. Shipping schedules can slip when wafer lots are put on hold until the master critical layer reticle is returned to production. Unfortunately, substituting backup critical layer reticles can significantly reduce an otherwise tightly controlled process window adversely affecting wafer yields. One major requal cycle time component is the disposition process of mask inspections containing hundreds of defects. Not only is precious non-productive time extended by reviewing hundreds of potentially yield-limiting detections, each additional classification increases the risk of manual review techniques accidentally passing real yield limiting defects. Even assuming all defects of interest are flagged by operators, how can any person's judgment be confident regarding lithographic impact of such defects? The time reticles spend away from scanners combined with potential yield loss due to lithographic uncertainty presents significant cycle time loss and increased production costs An automatic defect analysis system (ADAS), which has been in fab production for numerous years, has been improved to handle the new challenges of 14nm node automate reticle defect classification by simulating each defect's printability under the intended illumination conditions. In this study, we have created programmed defects on a production 14nm node critical-layer reticle. These defects have been analyzed with lithographic simulation software and compared to the results of both AIMS™ optical simulation and to actual wafer prints.
机译:IC晶圆厂会定期检查关键掩模,以确保高晶圆产量。由于许多原因,这些重新资格检查的成本很高,包括固定设备,系统维护和人工成本。此外,遮罩通常会在“相等”阶段停留较长的非生产时间。光罩保持非生产状态的整个“相等”周期时间是难以控制的。当晶圆批次被搁置直到主关键层掩模版重新生产时,运输进度可能会有所延迟。不幸的是,替换备用关键层掩模版可以显着减少原本受到严格控制的工艺窗口,从而不利地影响晶片良率。合格的主要循环时间要素之一是掩膜检查的处理过程,其中包含数百个缺陷。通过复查数百种可能的限产检测,不仅延长了宝贵的非生产时间,而且每个附加的分类都增加了手动审阅技术意外通过实际的限产缺陷的风险。即使假设所有感兴趣的缺陷都被操作员标记,那么任何人的判断如何对此类缺陷的光刻影响充满信心?十字线从扫描仪上花费的时间加上由于光刻不确定性而导致的潜在良率损失,显着缩短了周期时间,并增加了生产成本现已在晶圆厂生产中使用多年的自动缺陷分析系统(ADAS)已得到改进,可以处理14nm节点的新挑战是,通过在预期的照明条件下模拟每个缺陷的可印刷性,来实现光罩缺陷分类的自动化。在这项研究中,我们在生产的14nm节点关键层掩模版上创建了程序缺陷。这些缺陷已使用光刻仿真软件进行了分析,并与AIMS™光学仿真的结果和实际的晶圆印刷结果进行了比较。

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