Study of doping effects on Ta2O5−x/ TaOy based bilayer RRAM devices

摘要

Doping effects of Al, Si, P, and S on the key resistive switching performances for TaO/TaO based bilayer RRAM devices were studied systematically. Forming voltages were reduced by Si, P, and S dopants. Uniformity of ON/OFF resistance and operational voltages for the doped devices was improved. P doped devices exhibit the best resistive switching performances including forming voltage uniformity, operational voltages and ON/OFF resistance distribution. This paper gives the glance of dopants selection guidelines for the Ta oxide based RRAM devices.