Single-implant, field plate and guard rings assist multi-zone graded JTE for 4H-SiC p-i-n diodes

摘要

A novel edge termination, referred to as single-implant, field plate (fp) and guard rings (gr) assist two-zone graded junction termination extension (fpgr-assist JTE), is presented for 4H-SiC p-i-n diodes to extend the JTE dose window. The new termination can extend and combine the split window of two-zone graded JTE just using the same fabrication process of conventional single-implant two-zone graded JTE. Optimum JTE dose window (>4000V) is significantly extended by a ratio of 76.9%.