Development of low temperature amorphous tin-doped indium oxide thin-film transistors technology

摘要

We successfully fabricated high performance amorphous tin-doped indium oxide (a-ITO) thin film transistors (TFTs) at low temperature (≤ 150 °C) for full-transparent, flexible and large area electronics applications. The fabricated a-ITO TFT has a typical threshold voltage (Vth) of about 0.12 V, an acceptable carrier mobility of 7.6 cm/V·s, and a steep subthreshold swing of 174 mV/decade. The on/off current ratio is more than 1×10.