A sub-1-V nanopower full CMOS bandgap voltage reference is implemented in standard 0.18-μm CMOS process in this paper. The active area occupies only 0.0094mm. Moreover, low voltage and low power operation is achieved by utilizing weighted difference of two gate-source voltages (ΔV) created by a n-MOSFET pair with different gate oxide thickness, three current branches topology and self-cascode structure. Measured results of 20 samples show that it works properly for the supply voltage (V) from 0.8V to 2.5V. The output reference voltage (V) is 564±30mV with standard deviation(σ) being 11.2mV and measured Temperature Coefficient (TC) at best is 8ppm/°C with 15 ppm/°C on average. When supplied by 1V, the power dissipation of proposed bandgap reference is 52nW at 27°C.
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