Recent advances and future trends in SOI for RF applications

摘要

In recent years, RFCMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in wireless applications. Requirements of lower insertion loss, better isolation and better linearity have driven RFCMOS-SOI roadmap. R*C, a key figure-of-merit for switch application, has scaled from > 300fs to <; 200fs. In this paper, we review commonly adopted techniques to further improve R*C, along with their limitations.