Soft Error Tolerance of Standard and Stacked Latches Dependending on Substrate Bias in a FDSOI Process Evaluated by Device Simulation

摘要

Soft error tolerance in a thin BOX FDSOI process depends on substrate bias because soft errors are mainly caused by the parasitic bipolar effect (PBE). Substrate-bias dependence of soft error tolerance is evaluated by changing thickness of a BOX layer by device simulations. We compare the soft error tolerance between standard and stacked flip-flops (FFs). At 10 nm BOX thickness, soft error tolerance of both FFs greatly change by body bias. But at 100 nm BOX thickness, soft error tolerance of standard FF is stable but that of the stacked FF is not stable. The BOX thickness has a large impact on the PBE by the substrate bias.