Performance Enhancement of 4T-IFGC DRAM in 7nm NC-FinFET Technology Node

摘要

In this paper, we propose a performance enhanced 4T-Internal Feedback Gain Cell (IFGC) Dynamic Random Access Memory (DRAM) based on 7nm Negative Capacitance (NC) FinFET node. We propose a high-performance architecture of the NC-FinFET based DRAM cell exploiting unique characteristics of NC-FinFETs and observe that the proposed cell exhibits superior read and write delay, Data Retention Time (DRT), and leakage power as compared to the conventional DRAM. We then suggest a body biasing scheme to further improve the DRT of gain cell.