首页>
外国专利>
DRAM technology of storage node formation and no conduction/isolation process of bottle-shaped deep trench
DRAM technology of storage node formation and no conduction/isolation process of bottle-shaped deep trench
展开▼
机译:DRAM技术的瓶形深沟槽的存储节点形成和无导通/隔离过程
展开▼
页面导航
摘要
著录项
相似文献
摘要
An improved method for reducing the cost of fabricating bottle-shaped deep trench capacitors. It includes the steps of: (a) forming a deep trench into a semiconductive substrate; (b) filling the deep trench with a first dielectric material to a first predetermined depth; (c) forming a silicon nitride sidewall spacer in the deep trench above the dielectric layer; (d) removing the first dielectric layer, leaving the portion of the substrate below the sidewall spacer to be exposed; (e) using the sidewall spacer as a mask, causing the exposed portion of the substrate to be oxidized, then removing the oxidized substrate; (f) forming an arsenic-ion-doped conformal layer around the side walls of the deep trench, including the sidewall spacer; (g) heating the substrate to cause the arsenic ions to diffuse into the substrate in the deep trench not covered by the sidewall spacer; (h) removing the entire arsenic-ion-doped layer; (i) forming a conformal second dielectric layer covering the surface of the deep trench including the sidewall spacer, then filling the deep trench with a first conductive material to a second predetermined depth which is above the first predetermined depth; (j)removing the sidewall spacer and the second dielectric layer above the second predetermined depth; and (k) filling the deep trench with a second conductive material. The present invention allows several cycles of deposition/controlled etching to be eliminated while improving the quality of the deep trench capacitors.
展开▼