MTJ-Based Nonvolatile Logic-in-Memory Circuit with Feedback-Type Equal-Resistance Sensing Mechanism for Ternary Neural Network Hardware

摘要

A compact and energy-efficient ternary logic gate based on MTJ-based nonvolatile logic-in-memory (NV-LIM) architecture is proposed for ternary neural network (TNN) hardware implementation. The use of feedback loops for equal-resistance sensing of magnetic tunnel junction (MTJ) devices achieves better energy efficiency as well as reduced MTJ device count and circuit area. Through an experimental evaluation of a basic component of TNN hardware, its impact on the compact and energy-efficient TNN hardware design is demonstrated.