Radiation damaging of semiconductor materials

摘要

The formation of porosity in 3C-SiC thin layer of a metal substrate is studied in the paper. The mathematical model of radiation damaging of semiconductors can be utilized in development of perspective materials such as a porous silicon carbide. Implanting inert gases into solids initiates a phase transition of the first kind and produces pores (or blisters of neutral gases) in a thin crystal lattice layer of a 3C-SiC semiconductor. A radiation flux of high energy Xe ions stimulates the nucleation of lattice defects. The initial stage of phase transitions in case of not equilibrium defects clustering is described by stochastic models. Kinetic Kolmogorov equations formulated for probability density of Markov random processes and stochastic Ito-Stratonovich differential equations /SDEs/ are used to obtain non-equilibrium distribution functions /DF/ of pores with respect to sizes and lattice's positions. We show that damaging silicon carbide on boundary SiC/Mo layers can be predicted (with account of indirect elastic forces) by computer simulation. The same process as the method of porosity creation in semiconductors can be considered as alternative to etching.