High quantum efficiency 200–1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

摘要

High quantum efficiency (QE) 200–1000 nm spectral response photodiodes using on-chip multiple high transmittance optical layers are demonstrated for development of a high sensitivity linear photodiode array (PDA). In this paper, seven types of PDs with an optical layer each having a band-pass filter type transmittance are described. A surface photo-generated carrier drift layer is employed to improve internal QE and stability of sensitivity to UV-light. The average QE of 79% for 200–1000 nm and 84% for 200–380 nm were obtained for the fabricated PDs. In addition, after acceleration UV-light exposure, degradation of QE is below 15% and increment of dark current is less than double.