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Timing analysis for wide IO memory interface applications with silicon interposer

机译:带有硅中介层的广泛IO存储器接口应用的时序分析

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Memory bandwidth requirements for future high-end applications such as graphics, 200G/400G networking and high performance computing is driving the need for more “on-chip memory”. Silicon Interposer based 2.5D integration provides an intermediate path to achieving high memory bandwidth by integrating memory in package. This paper discusses timing budget analysis for realizing wide IO memory interfaces in silicon interposer technology. Traditional signal and power integrity (SI/PI) analysis for closing system timing in DDR interfaces cannot be applied directly to “chip-to-chip scenarios” as it tends to be time consuming because of need for extensive electromagnetic (EM) simulations. In addition, the assumptions on bus activity and IO bandwidth/density/speed are unique to 2.5D memory customer applications. Applying traditional assumptions from off-chip double data rate (DDR) memory interfaces to “in-package” memory interfaces can lead to additional cost overhead at chip/package and board level. The key contributions of this paper are in providing an accurate time efficient SPICE based modeling methodology to design and optimize 2.5D memory applications cost effectively to meet desired timing specifications. This paper notes simultaneous switching noise (SSN) to be a major impairment leading to eye closure in wide memory interfaces with worst case timing jitter numbers of the order of 130ps in FPGA applications. Achieving 500MHz to 1GHz DDR operating speeds primarily require a more rigorous application - based tuning of on-die decoupling capacitance, PDN inductive parasitics, interconnect length and IO drive strength. But the power, bandwidth and latency benefits of wide IO system-in-package (SIP) memory make the additional development effort worthwhile.
机译:图形,200G / 400G网络和高性能计算等未来高端应用程序对内存带宽的需求,推动了对更多“片上内存”的需求。基于Silicon Interposer的2.5D集成提供了通过将内存集成在封装中来实现高内存带宽的中间途径。本文讨论了在硅中介层技术中实现广泛的IO存储器接口的时序预算分析。用于关闭DDR接口中系统时序的传统信号和电源完整性(SI / PI)分析不能直接应用于“芯片对芯片方案”,因为由于需要大量的电磁(EM)仿真,它往往很耗时。此外,对于总线活动和IO带宽/密度/速度的假设对于2.5D内存客户应用程序是唯一的。将片外双倍数据速率(DDR)存储器接口的传统假设应用于“封装内”存储器接口可能会导致芯片/封装和板级的额外成本开销。本文的主要贡献在于提供了一种基于SPICE的准确时间高效的建模方法,可以经济高效地设计和优化2.5D存储器应用,从而满足所需的时序规范。本文指出,同时开关噪声(SSN)是导致宽存储器接口中眼图闭合的主要障碍,在FPGA应用中,最坏情况下的时序抖动数约为130ps。要实现500MHz至1GHz DDR的工作速度,首先需要更严格的应用-基于对管芯去耦电容,PDN电感寄生效应,互连长度和IO驱动强度的调整。但是,广泛的IO系统级封装(SIP)内存在功耗,带宽和延迟方面的优势使值得付出额外的开发工作。

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