This paper analyses the switching losses of the power semiconductors of a half bridge with inductive load. The focus is on unipolar power semiconductors with large output capacitances such as a SiC-FET and its body-diode or a Schottky-Barrier-Diode. The losses of the devices will be divided into dissipated energy and stored energy. With the switching off is some of the measured energy stored and the other dissipated. The dissipated energy during switching on is the stored energy and the measured. The exact amount of switching losses can be measured but each one is inaccurate. The diode shows the same phenomena. So a Schottky-Barrier-Diode may not have switching losses.
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