Wrinkling Graphene with Bacteria and Functionalization of MoS_2 for Electronic Applications

摘要

Ultrathin two dimensional (2D) metal dichalogenide (MoS_2, WS_2, so forth) exhibits confinement of carriers, evolution of band structure, high on/off rectification, and high thermal absorption. However their incorporation into systems requires controlled functionalization and/or interaction with other nanoscale entities. Here, we enhance the stable sulfuroble metal functionalization via both diffusion limited aggregation and instantaneous reaction arresting (using microwaves). These gold nanoparticles are incorporated selectively on M0S2 crystallographic edges (with 60~0 displacement). The Raman, electrical and thermal studies indicate a remarkably capacitive interaction between gold and thin MoS_2 sheet (C_(Au-MoS2) = 2.17 μF/cm~2), a low Schottky barrier (14.52 meV), a reduced carrier-transport thermal-barrier (253 to 44.18 meV after gold functionalization), and increased thermal conductivity (from 15 W/mK to 23 W/mK post gold deposition). This process provides a route to affiliate MoS_2 with potential electronic application, such as electrodes attachment to hetero-structures of graphene and MoS_2, where a gold film could be grown to act as an electron-tunneling gate-electrode connected to MoS_2. Further, wrinkle-formation is exclusively exhibited by 2D nanomaterials, unlike their 0D and 1D counterparts. In graphene, these wrinkles can modify the electronic structure and states. We show wrinkles on graphene, their orientation and attributes (wavelength and amplitude) and that they obey the modified Herringbone model.