Bulk-limited Effect in Gradual Conductance Switching Behaviour of HfOx-based Memristive Devices for Analog Synaptic Device Applications

摘要

In this paper, conductance switching behavior of Pt/HfOx/Ti redox-based memristive devices has been thoroughly investigated. The conduction mechanisms involved during the device operation can be associated with the trap-controlled SCL conduction mechanisms. The extracted parameters suggest the gradual switching behavior achieved by the devices was due to the transition between different trap level within trap-fill SCL regime, which is beneficial for the device implementation as analog synapse in the neuromorphic computing platform.