II-VI semiconductors; X-ray diffraction; diffusion; manganese; nanofabrication; nanoparticles; particle size; photochemistry; photoluminescence; polymerisation; semiconductor growth; wide band gap semiconductors; zinc compounds; α-hydroxyl acetic acid; α-hydroxyl acetic acid molecules; (glycolic acid) molecules; UV irradiation effect; UV irradiation time; UV wavelength; XRD pattern; ZnS crystal network; ZnS:Mn; electron pairs; energy transition process; gradual diffusion; hexagonal wurtzite crystalline structure; hydrothermal method; hydroxyl group; nanoparticle size; optical properties; photochemical process; photoluminescence spectra; polymerization; surface passive shell; temperature 220 degC; thioglycolic acid; time 20 h; time 5 h; ultraviolet irradiation effect; vacancy 3d orbitals; yellow-orange band intensity; Absorption; Annealing; Manganese; Nanoparticles; Photoluminescence; Radiation effects; Surface treatment;
机译:水热法合成Mn掺杂ZnS纳米粒子的光学和磁性
机译:反应温度,保温时间和S / Zn摩尔比对水热法合成ZnS纳米粒子的结构,形貌,光电性能的影响
机译:水热法合成Mn掺杂ZnS半导体纳米团簇的光学性质
机译:紫外线照射对ZnS:Mn的光学性质的影响,用水热法合成,使用巯基乙酸
机译:ZnS和ZnSSE纳米结构的生长和光学性能
机译:水热法合成亚毫米银纳米线的光学性质
机译:喷雾热解法合成Zn1-xMnxO微棒阵列的结构,光学和磁性