Proposal and experimental demonstration of monolithic InP/InGaAsP polarization modulator

机译：单片InP / InGaAsP偏振调制器的建议和实验演示

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We propose a novel monolithically integrated InP/InGaAsP polarization modulator, consisting half-ridge polarization converters and electro-optic phase modulators. A proof-of-concept device is fabricated and demonstrated to show conversion to an arbitrary state on the Poincaré sphere.

机译：我们提出了一种新颖的单片集成InP / InGaAsP偏振调制器，该调制器由半脊偏振转换器和电光相位调制器组成。制作并证明了概念验证装置可显示在庞加莱球上转换为任意状态的能力。

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《European Conference on Optical Communication》|2014年|1-3|共3页
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Kawabata Y.; Zaitsu M.; Tanemura T.; Nakano Y.;
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III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; integrated optics; optical modulation; phase modulation; InP-InGaAsP; Poincare sphere; electro-optic phase modulators; half-ridge polarization converters; monolithically integrated polarization modulator; Electrooptic modulators; Electrooptical waveguides; Indium phosphide; Phase modulation; Vectors; Voltage measurement;

机译：III-V半导体;电光调制;砷化镓;铟化合物;集成光学;光调制;相位调制; InP-InGaAsP;庞加莱球;电光相位调制器;半脊偏振转换器;单片集成偏振调制器;电光调制器;光波导;磷化铟;调相;矢量;电压测量;

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专利

1. Polarization-insensitive, monolithic 4/spl times/4 InGaAsP-InP laser amplifier gate switch matrix [J] . van Berlo W., Janson M. IEEE Photonics Technology Letters . 1995,第11期

机译：偏振不敏感的单片4 / spl次/ 4 InGaAsP-InP激光放大器栅极开关矩阵
2. Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD [J] . Q Zhao, J Q Pan, F Zhou, Semiconductor science and technology . 2005,第6期

机译：InGaAsP-InP应变DFB激光器和电吸收调制器通过超低压选择区生长MOCVD的单片集成
3. 1.55 /spl mu/m transmission at 2.5 Gbit/s over 1102 km of NDSF using discrete and monolithically integrated InGaAsP-InP Mach-Zehnder modulator and DFB laser [J] . Adams D.M., Rolland C. Electronics Letters . 1998,第8期

机译：使用分立且单片集成的InGaAsP-InP Mach-Zehnder调制器和DFB激光器在1102 km的NDSF上以2.5 Gbit / s的速率传输1.55 / spl mu / m
4. First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells [C] . Woo R.L. Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE . 2011

机译：基于InP的单片InAlAs / InGaAsP / InGaAs三结太阳能电池的首次演示
5. Demonstration of monolithic optical injection locking for directly modulated RF photonic links. [D] . Jung, Thomas. 2004

机译：演示了直接调制的RF光子链路的单片光学注入锁定。
6. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition [O] . Ludovico Megalini, Simone Tommaso Šuran Brunelli, William O. Charles, 2018

机译：应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的（001）图案化Si衬底上生长的InP的缺陷
7. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS [O] . Robyn L. Woo, William D. Hong, Shoghig Mesropian, 2014

机译：单片Inp基Inalas / InGaasp / InGaas三结太阳能电池的首次演示
8. Monolithically Integrated InGaAsP/InP Laser/Modulator Using Identical Layer Approach for Opto-Electronic Oscillator [R] . Wu, C., Keo, S., Yao, S., 1998

机译：采用相同层方法的单片集成InGaasp / Inp激光器/调制器，用于光电子振荡器

Proposal and experimental demonstration of monolithic InP/InGaAsP polarization modulator

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