An InGaAsP laser structure having a support structure which contains an equal number of buffer layers and substrate layers is provided. The buffer layers of the support structure drastically reduce the tensile stress in the active layer, thereby eliminating the occurrence of undesired TM emission during normal operation. The semiconductor laser device of the present invention comprises: a support structure having one or more substrate layers and one or more buffer layers, the support structure containing an equal number of substrate layers and buffer layers, the substrate layers consisting of InP, the buffer layers consisting of In.sub.1-x' Ga.sub.x' As.sub.y' P.sub.1-y' with x'. perspectiveto.0.47y' and 0 y'≦1, one of the substrate layers providing the lower surface of said semiconductor laser device; a first cladding layer of InP formed on the exposed buffer layer of the support structure; an active layer formed on the first cladding layer, the active layer consisting of In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with x. perspectiveto.0.47y and y≦y'≦1 and a second cladding layer of InP formed on the active layer; and a cap layer of In.sub.1-x" Ga.sub. x" As.sub.y" P.sub.1-y" with x"≃0.47y" and 0 y"≦ 1 formed on the second cladding layer; the buffer layers, first cladding layer, active layer, second cladding layer, and cap layer being substantially perfectly lattice-matched with the substrate layers at the growth temperature. Preferably, the buffer layers consist of In.sub.0.53 GA.sub. 0.47 As.
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机译:提供具有支撑结构的InGaAsP激光器结构,该支撑结构包含相等数量的缓冲层和衬底层。支撑结构的缓冲层极大地降低了活性层中的拉应力,从而消除了正常操作期间不希望的TM发射的发生。本发明的半导体激光装置包括:具有一个或多个基板层和一个或多个缓冲层的支撑结构,该支撑结构包含相等数量的基板层和缓冲层,所述基板层由InP构成,所述缓冲层由In.sub.1-x'Ga.sub.y'P.sub.1-y'和x'组成。透视到0.47y′和0 <y′≦ 1,衬底层之一提供所述半导体激光器件的下表面;在支撑结构的暴露的缓冲层上形成InP的第一包层;有源层形成在第一覆盖层上,该有源层由具有x的In 1-x Ga x As y P 1-y组成。透视到0.47y和y&y; y'≦ 1,并在有源层上形成InP的第二包层;并且形成In 1-x“ Ga x x As.y” P 1-y“的覆盖层,其中x”≃ 0.47y“和0 展开▼