Selective amplifier microwave-based non-inverting repeater AC current element basis of radiation resistant SiGe process technology

摘要

Considered circuitry of selective amplifiers (SA) of the microwave range, the basis for constructing non-inverting repeaters alternating current. Proposed scheme of SA implemented in element basis of radiation-resistant SiGe process technology and don't contain any of the PNP transistors. Given calculation expressions of basic parameters. Shown the results of computer simulation of the SA in the gigahertz frequency range.