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The power-loss analysis and efficiency maximization of a silicon-carbide MOSFET based three-phase 10kW bi-directional EV charger using variable-DC-bus control

机译:基于多功能DC总线控制的三相10kW双向EV充电器的碳化硅MOSFET的电力损耗分析及效率最大化

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It is expected that wide-bandgap devices like silicon carbide MOSFETs and gallium nitride HEMTs could replace Si devices in power electronics converters to reach higher system efficiency, e.g., a 3-phase 380VAC bidirectional battery charger for electric vehicles. This paper uses the conventional half-bridge LLC topology to build a 10kW all-SiC bidirectional charger. As a well-known topology for the unidirectional charger, it has not been comprehensively explored for the usage of the bidirectional energy flow, which falls into the scope of this paper. A double-pulse-test platform is utilized to provide the accurate power losses, which, combined with the state-space model deriving the accurate switching current waveforms eventually accurately, estimates the system efficiency. Based on this model, to further enhance the system efficiency the DC-bus voltage is varied while keeping the LLC DC/DC converter running at the resonant frequency through the whole power range. Experimental results validated our proposed approach that such topology could realize the bidirectional power flow with zero-voltage-switching turn on. With varying the DC-bus voltage, the V2G and G2V modes reach ~96% wall-to-battery efficiency.
机译:预计碳化硅MOSFET等宽带隙装置可以替代电力电子转换器中的SI器件,以达到更高的系统效率,例如用于电动车辆的3阶段380VAC双向电池充电器。本文采用传统的半桥LLC拓扑构建了10kW的全SIC双向充电器。作为单向充电器的众所周知的拓扑,它尚未全面探索使用双向能量流动的使用,这落入本文的范围。利用双脉冲测试平台来提供精确的功率损耗,即与最终精确地导出精确切换电流波形的状态空间模型,估计系统效率。基于该模型,为了进一步提高系统效率,可以通过整个功率范围保持在谐振频率下运行的LLC DC / DC转换器的同时变化DC总线电压。实验结果验证了我们所提出的方法,即这种拓扑结构可以实现具有零电压开关的双向动力流。随着DC总线电压的改变,V2G和G2V模式达到壁到电池电量效率〜96%。

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