Modeling of advanced devices

摘要

As shrinking of conventional, bulk planar MOS transistors ran out of steam in the late 1990's and early 2000's, innovation in device structures has become a key driver of the semiconductor industry. Once a structure has been verified to have sufficiently good electrical performance at the device level, its performance in real circuits needs to be established. This requires circuit simulation, which requires a compact model of the device. The five papers in this session address various aspects of modeling of new devices or new aspects of device behavior.