Quantum ballistic simulation study of InGaAs/InAs/InGaAs quantum well MOSFET: Effects of doping and physical device parameters

摘要

In this work, simulation study of device parameter variation on quantum ballistic Current-Voltage (I-V) characteristics of a In0.7Ga0.3As/InAs/InGaAs Quantum Well (QW) MOSFET is presented. Doping density and various physical device parameters like channel thickness, gate dielectric thickness affect ballistic performance of nanoscale transistors. To simulate Current-Voltage (I-V) characteristics in quantum ballistic regime, nonequilibrium Green's function formalism (NEGF) has been used. In this work, the effect of device parameters on subthreshold and short channel performance is also demonstrated. It is observed that scaling of gate dielectric material and channel thickness could provide better electrostatic control at the expense of ballistic device current. However ballistic current can be improved by increasing doping density.