Nonlinear optical properties of semiconductor thin films and multilayer structures containing such films

摘要

Refraction and absorption indices dependencies on the optical field intensity for deposited thin films of certain semiconductors and some other materials in the near-infrared range have been experimentally obtained by using Z-scan technique. Multilayer structures containing such films with high nonlinear coefficients as one or several constituent layers are very promising in the context of low-threshold nonlinear optical devices.