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Scaling and reliability of NAND flash devices

机译:NAND闪存设备的扩展性和可靠性

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Numerous scaling limitations of NAND flash memory have arisen due to the intrinsic nature of the operational principle of NAND flash memory and those limitations eventually lead to a paradigm shift in the NAND flash technology from the planar cell to the vertical NAND cell. In this paper, the limitations of scaling which induce the evolution of the NAND cell as well as the current trends of NAND technology are reviewed.
机译:由于NAND闪存的工作原理的内在本质,出现了NAND​​闪存的许多缩放限制,并且这些限制最终导致NAND闪存技术从平面单元向垂直NAND单元的范式转变。在本文中,回顾了导致NAND单元发展的规模限制以及NAND技术的当前趋势。

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