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The SEMATECH high-NA actinic reticle review project (SHARP) EUV mask-imaging microscope

机译:SEMATECH高NA光化分划板审查项目(SHARP)EUV掩模成像显微镜

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The SEMATECH High Numerical Aperture Actinic Reticle Review Project (SHARP) is a newly commissioned, synchrotron-based extreme ultraviolet (EUV) microscope dedicated to photomask research. SHARP offers several major advances including objective lenses with 4×NA values from 0.25 to 0.625, flexible, lossless coherence control through a Fourier-synthesis illuminator, a rotating azimuthal plane of incidence up to ±25°, illumination central ray angles from 6 to 10°, and a continuously tunable, EUV illumination wavelength. SHARP is now being used to study programmed and native mask defects, defect repairs, mask architecture, optical proximity correction, and the influence of mask substrate roughness on imaging. SHARP has the ability to emulate a variety of current and future lithography tool numerical apertures, and illumination properties. Here, we present various performance studies and examples where SHARP's unique capabilities are used in EUV mask research.
机译:SEMATECH高数值孔径光化掩模审查项目(SHARP)是基于同步加速器的新近委托调试的极紫外(EUV)显微镜,专门用于光掩模研究。 SHARP提供了几项重大进展,包括物镜具有从0.25到0.625的4×NA值,通过傅立叶合成照明器进行的灵活,无损相干控制,旋转的入射方位角达±25°,照明中心光线角度从6到10 °和连续可调的EUV照明波长。 SHARP现在被用于研究编程的和本机的掩模缺陷,缺陷修复,掩模结构,光学邻近校正以及掩模基板粗糙度对成像的影响。 SHARP能够模拟各种当前和未来的光刻工具的数值孔径和照明特性。在这里,我们介绍了各种性能研究和示例,其中在EUV掩模研究中使用了SHARP的独特功能。

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