Formation of nanoelectrodes for high temperature single-electron sensors

摘要

To create a molecular transistor, that is capable to operate in single-electron regime at room temperature, nanogap of several nanometers between electrodes is needed. Such nanogaps can be obtained by electromigration. In this work the technique of the creation of nanowire samples suitable for electromigration is described. Nanowires were formed on a substrate without buffer metallic layer to provide best conditions for electromigration process.