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Magnetic Mitigation of Debris for EUV Sources

机译:电磁缓解EUV源的碎片

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Extreme Ultraviolet (EUV) lithography sources expel high-energy ions and neutral particles, which degrade the quality of the collector optic. The mitigation of this debris is one of the main problems facing potential manufacturers of EUV sources. The use of magnetic fields to deflect ionic debris has been proposed and is investigated here. In this paper, we present a detailed computational model of magnetic mitigation, along with experimental results that confirm the correctness of the model. Using a strong permanent magnet, it is experimentally shown that, using high enough fields, magnetic mitigation can be a successful method of deflecting ionic debris from an EUV source. For example, through an orifice centered at 0° from the pinch, we saw a flux of 1.65×10~8 +/- 1.5×10~7 ions/(m~(2*)pulse~*eV) of 4keV ions without deflection and a negligible flux with deflection. With the orifice at a 35° angle from the pinch, a negligible 4keV flux was seen without deflection. However, with magnetic deflection, a 4keV flux of 1.03×10~8 +/- 9.4×10~6 ions/(m~(2*)pulse~*eV) were seen. The half-angle spread of the orifice was .047° with a tolerance of .008°.
机译:极紫外(EUV)光刻源会排出高能离子和中性粒子,这会降低收集器光学器件的质量。减少这种碎片是潜在的EUV光源制造商面临的主要问题之一。已经提出了使用磁场来偏转离子碎片的方法,并在此进行了研究。在本文中,我们提出了一个详细的磁缓和计算模型,以及证实该模型正确性的实验结果。实验证明,使用强大的永磁体,利用足够高的磁场,磁缓和技术可以成为偏转EUV源中离子碎片的成功方法。例如,通过从夹点以0°为中心的孔口,我们看到了1.65×10〜8 +/- 1.5×10〜7离子/(m〜(2 *)pulse〜* eV)4keV离子的通量。挠度和带有偏斜的通量可忽略不计。当孔口与收缩点成35°角时,可以看到微不足道的4keV通量,而没有偏转。然而,在磁偏转的情况下,观察到4keV通量为1.03×10〜8 +/- 9.4×10〜6离子/(m〜(2 *)pulse〜* eV)。孔口的半角扩展为.047°,公差为.008°。

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