Optical and Electrical Properties of ZnO Thin Films Grown by Sol-Gel Method

摘要

The ZnO thin films have been deposited on p-type Si and quartz substrates by the spin-coating method and after deposition were heated at different temperatures in the range from 650 K to 850 K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12-350 K. The structural properties of the ZnO thin films were studied using X-ray diffraction and SEM methods. The effects of the thickness variation and annealing temperature on the crystallinity parameters were observed. I-V, C-V measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The electrical response of grains, grain boundaries and contacts of the ZnO film were obtained.