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Effects of N Concentration on Electronic Structure and Optical Absorption Properties of N-doped SrTiO_3 from First Principles

机译:n浓度对第一原理N-掺杂SRTIO_3电子结构和光学吸收性能的影响

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The nitrogen concentration effects on electronic structures and optical properties of N-doped SrTiO3 have been investigated on the basis of density functional theory (DFT) calculations. Through band structure calculation, a direct band gap is predicted in SrTiO3-xNx. Electronic structure analysis shows that the doping N could substantially lower the band gap of SrTiO3 by the presence of an impurity state of N 2p on the upper edge of the valence band. When the doping level rises, the energy gap has little further narrowing compared with that at lower doping levels. The calculations of optical properties indicate a possible optimum N-doping level in SrTiO3 with a high photo response for visible light. These conclusions are in agreement with the recent experimental results.
机译:基于密度泛函理论(DFT)计算,研究了对N-掺杂SRTIO3的电子结构和光学性质的氮浓度效应。通过频带结构计算,在SRTIO3-XNX中预测了直接频带隙。电子结构分析表明,掺杂N可以通过在价带的上边缘上存在N 2 P的杂质状态而显着降低SRTIO3的带隙。当掺杂水平上升时,与较低掺杂水平相比,能量隙几乎没有进一步缩小。光学性质的计算在SRTIO3中表示可能的最佳N掺杂水平,具有高光响应的可见光。这些结论与最近的实验结果一致。

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