Sub-10nm Nanolithography and Direct Pattern Transfer on III-V Compound Semiconductor Using Sol-gel Derived ZrO{sub}2

摘要

A new approach for direct sub-10nm pattern transfer using spin-coated ZrO{sub}2 is presented. The sample InP compound etching selectivity to ZrO{sub}2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm.