Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor

摘要

An ultrahigh photocurrent (PC) signal which was about thousand times higher compared to the corresponding dark current was achieved in a two-dimensional (2D) multi-layer MoS₂ field effect transistor (FET), owing to a gate-controlled MoS₂/Ti/Au Schottky barrier (SB) modulation. The SBs can be enlarged for suppressing the electron drift along the channel in dark environment, and be reduced for the collection of photo-excited charge carriers in illuminating environment, providing the great potential for 2D electronic and optoelectronic applications.