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PDN Characteristics of 3D-SiP with a Wide-bus Structure under 4k-IO Operations

机译:3D-SIP的PDN特性,具有4K-IO操作下的宽总线结构

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The 4096 bits wide-bus three-dimensional integration device using through-silicon-vias (TSVs) has been designed and fabricated as a demonstrator for power integrity such as power distribution network (PDN) impedance, and simultaneous switching output (SSO) noise characteristics. Anti-resonance peak of total PDN impedance was extracted at around 80 MHz. This result was well coincident with maximum SSO noise frequency at around 75 MHz. Further, SSO noise reduction clocking named phase-shift clock has also been implemented to demonstrate the effectiveness as measurement basis.
机译:使用通过硅通孔(TSV)的4096位宽总线三维集成装置已经设计和制造为用于电力完整性的示范器,例如配电网络(PDN)阻抗,同时开关输出(SSO)噪声特性 。 总PDN阻抗的抗共振峰在约80MHz左右提取。 这一结果与最大SSO噪声频率相当左右,这一结果差约75 MHz。 此外,还已经实施了名为相移时钟的SSO降噪计数器以展示作为测量基础的有效性。

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