A ?1.8V to 0.9V body bias, 60 GOPS/W 4-core cluster in low-power 28nm UTBB FD-SOI technology

摘要

A 4-core cluster fabricated in low power 28nm UTBB FD-SOI conventional well technology is presented. The SoC architecture enables the processors to operate “on-demand” on a 0.44V (1.8MHz) to 1.2V (475MHz) supply voltage wide range and -1.2V to 0.9V body bias wide range achieving the peak energy efficiency of 60 GOPS/W, (419μW, 6.4MHz) at 0.5V with 0.5V forward body bias. The proposed SoC energy efficiency is 1.4x to 3.7x greater than other low-power processors with comparable performance.