Fabrication of silicon carbide semiconductor core optical fibre preform

摘要

This work describes for the first time about the development of silicon carbide (SiC) semiconductor doped optical fibre preform made by modified chemical vapor deposition (MCVD) process followed by solution doping technique. Quantum dot level nano crystals are observed after thermal annealing of the preform samples at 1400°C temperature. We explained the formation of silicon carbide semiconductors within silica glass based optical fibre preform thermodynamically followed by material characterization through EPMA, SEM, TEM, and XRD to investigate material properties of the preform samples. Such kind of optical fibre preforms will be suitable for making of silicon carbide semiconductor doped optical fibres which may open the door to use itself in the field of non-linear optical devices.