Proposing an enhanced approach of threshold voltage extraction for nano MOSFET

摘要

Precise threshold voltage value is evaluated by several estimation techniques. The governing gauge for efficient threshold voltage definition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology nodes. The values diverge due to various short channel effects (SCE), second order effects and non-idealities present in the device. A new enhanced approach for defining and extracting the threshold voltage for nano MOSFET is presented in the manuscript. The SCE independent threshold voltage extraction approach named Hybrid Extrapolation Vth Extraction Method (HEEM) is elaborated, modeled and compared with other prevalent threshold voltage extraction methods for validation of the results. The results are demonstrated by extensive 2-D TCAD simulation and confirmed analytically at various technology nodes.