A millimeter-wave CMOS low noise amplifier using transformer neutralization techniques

摘要

A single-ended neutralization technique is proposed for the designs of low noise amplifiers (LNA). A neutralized transformer which is located at the gate and drain terminal mitigates the intrinsic gate-drain feedback of transistor, thereby the gain and reverse isolation are increased. The neutralization can be optimized by adjusting the offset of primary and secondary of transformer inductors. Fabricated in a 65-nm bulk CMOS process, this prototype of LNA achieved small-signal gain of 9.4 dB and noise figure of 6.7 dB at 79GHz, while consuming 9.7 mW from a 1-V supply.