Coupled electrothermal and electromagnetic modeling, simulation and design of RF and microwave power FETs

摘要

The design and modeling of power FETs for microwave power amplifiers is described, based on physical and equivalent circuit models coupled to electro-thermal and electromagnetic simulations. The results from this work reveal complex behavior in large high frequency power devices and facilitate the design of very high power, high efficiency transistors. This approach allows the maximizing of power added efficiency and assists in optimizing the thermal management and circuit design.