Nonlinear Behavior Characterization of RF Active Devices Usin Impedance-dependence X-parameters

摘要

This paper presents a nonlinear characterization of active device using polyharmonic distortion model formed by X-parameters. By means of the Polyharmonic distortion model characterized via nonlinear vector network analyzer makes it possible to achieve a good agreement between measured and simulated data in terms of power gain and intermodulation. Furthermore, large-signal validation of this model via X-parameters also shows a good match with measurements in RF LDMOS transistor without optimization. Results show that the X-parameters from nonlinear vector network analyzer appear to be a better method for nonlinear characterization.